Basic Info.
Model NO.
ET-PAE100W
RF Connector
SMA-50k or Other Customized
in-Band Ripple(dB)
<2dB
Impedance(Ohm)
50
Power Current
<11A
Input Power
<20dBm
Monitor Interface
RS-485 or RS232 or Other Customized
Transport Package
Carton Packing
Specification
2/5/10/20/40/50/100 watts
Trademark
ETENDA
Origin
Shenzhen
Production Capacity
500PCS/Month
Product Description
50dBm 100w 500w 900Mhz 400Mhz 1.5G 1.2G RF Power Amplifier
This type IMD3 is ≤-36dBc. All the parameters of PA can be customized depend on your request, if you have any customized parameters pls contact us freely,
Technical Specifications
This type IMD3 is ≤-36dBc. All the parameters of PA can be customized depend on your request, if you have any customized parameters pls contact us freely,
Technical Specifications
Frequency(MHz) | 925-960Mhz or Customized |
Input Power(dBm) | ≤0-20dBm or Customized |
Output Power(dBm) | 50±1(100W ) or lower |
Gain(dB) | 50dB or less |
Inband Ripple(dB) | ≤±1.5 or less |
ALC Range(dB) | ≥5 |
Gain flatness | ≤3dB |
Input/Output VSWR | ≤1.5:1 |
Impedance(ohm) | 50 |
Voltage(V) | DC+28 |
Working current | <10-16A |
Efficiency | ≥20%-40% or Customized |
Spurious | >60dBc |
IMD3(dBc)(optional) | -36,-40,-45dbc |
RF In/Out Connector | SMA-Female |
Monitor interface | RS-485 or RS232 or other Customized |
Working Temperature | -25~+65 degree |
Storage Temperature | -40 to +85 degree |
Operating Humidity | 0 to 90%, relative |
Weight | ≤1.5KG |
Protection | High temperature,High VSWR,Open circuit or customized |
Monitoring | Forward power,Reverse power,VSWR,Temperature,Enable |
Cooling | External Heat sink |