Broadband Ingaas Photo-Diode with Low Noise for Radar System

Introducing our high-performance Broadband InGaAs Photo-Diode with Low Noise for Radar Systems. As a factory, we ensure top quality products for your needs.
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PRODUCTS DETAILS

Basic Info.

Model NO.
Broadband InGaAs Photo-diode
Transport Package
Box
Specification
Small
Trademark
ZG
Origin
Mianyang, China

Product Description

The broadband InGaAs photodiode is consists of a photodiode chip and a basic circuit,with the saturation optical power can reach to 10dBm,miniaturized and can in-situ Replace EM169,standard SMA RF port output.

Features
Broadband
Low noise
Applications
RRU
Telemetry tracking and control
Radar system

Absolute maximum rated parameter
Parameter Symbol Condition Min Max Unit
Operating voltage Vpd - 3 9 V
Storage temperature Ts - -55 85 ºC
Operating temperature To - -40 70 ºC
Maximum received optical power PIN - - 10 dBm

Parameters
Parameter Symbol Condition Min. Typ. Max. Unit
Saturation optical power PS - - 10 - dBm
The modulation bandwidth BW - 0.1 20 - GHz
Amplitude flatness AF - - 2 - dB
Responsivity Re - - 0.85 - uA
Wavelength λ - 1260 1310/1550 1625 nm
Output impedance ROUT - - 50 - Ω
Optical interface FC/A PC(Can be Customized)
Fiber type Standard single mode fiber,Diameter 0.9mm,length 1m
Radio frequency interface(RFI) SMA
Size 17.78mm*12.7mm*8.9mm

Broadband Ingaas Photo-Diode with Low Noise for Radar System

Ordering information
ZG Wavelength Saturation power Bandwidth Connector
13=1310nm 10=10dbm 20=20GHZ FC/APC
15=1550nm     X
Broadband Ingaas Photo-Diode with Low Noise for Radar System
Broadband Ingaas Photo-Diode with Low Noise for Radar System
Broadband Ingaas Photo-Diode with Low Noise for Radar System Broadband Ingaas Photo-Diode with Low Noise for Radar System

 

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