Lithium Niobate on Insulator Substrates / Wafers (LNOI)

Discover the high-quality LNOI substrates from our factory for advanced photonic and electronic applications. Shop now for reliable performance.
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PRODUCTS DETAILS

  • Overview
  • Product Description
  • Detailed Photos
  • Product Parameters
  • Process Flow
  • Certifications
  • Packaging & Shipping
  • Our Advantages
Overview

Basic Info.

Model NO.
Lithium Niobate on Insulator Substrates
Specification
3-8inch
Trademark
CQT
Origin
China

Product Description

Product Description

Lithium Niobate Thin Films on Insulator is kind of POI (Piezoelectric On Insulator) wafer . It's stacked sequence structure is made of support substratesthat can be silicon, quartz, fused silica,sapphire or LN wafer, the interlayer is thermal oxide SiO2 that works as insulator and lithium niobate film is the functional layer above the insulation layer.
POI /LNOI engineered substrates enable the design of filters with high quality factor, large bandwidth, very low temperature sensitivity and low insertion loss with a simple device manufacturing technology. These wafers are developed and used for high speed modulators, high Q factor SAW devices, IR-detectors, THz devices.
We work with our strategical partner who has experiened at technology of smart cut and wafer bonding and supply with important Piezoelectric layer on LN/LT from the sizes of  3" 4" 6" up to 8" to build the special wafer with multilayered structure.

 

Detailed Photos
Lithium Niobate on Insulator Substrates / Wafers (LNOI)
Lithium Niobate on Insulator Substrates / Wafers (LNOI)
Lithium Niobate on Insulator Substrates / Wafers (LNOI)

 

Product Parameters

Specifications For LNOI

Layers Parameters Specifications
Top Functional Layer Material Lithium Niobate  Lithium Tantanlate
Diameter 3" 4" 6" 8"
Surface orientation X-cut or per request
Primary flat oritentation   per request   deg(°)
Secondary flat orientation   per request    
Film Thickness average thickness   300-600   nm
Front side /face roughness Optical polished
Isolation Layer
 
Buried Oxide avg thickness 4600 4700 4800 nm
Buried Oxide thickness uniformity -5 0 5 %
Support substrate Material SI/LN/SAPPHIRE/QUARTZ/ETC
Diameter 3" 4" 6" 8"
Support layer total thickness 525 525 625 725
Device growth method CZ CZ ZVD hydrothermal
Device orientation {100}   0.5 deg(°)
Device doping type N N    
Device dopant   Phos    
Surface finish     10 nm
Process Flow

Lithium Niobate on Insulator Substrates / Wafers (LNOI)

 

Certifications

Lithium Niobate on Insulator Substrates / Wafers (LNOI)

Lithium Niobate on Insulator Substrates / Wafers (LNOI)
Lithium Niobate on Insulator Substrates / Wafers (LNOI)


 

Packaging & Shipping

Lithium Niobate on Insulator Substrates / Wafers (LNOI)Lithium Niobate on Insulator Substrates / Wafers (LNOI)

Lithium Niobate on Insulator Substrates / Wafers (LNOI)
Lithium Niobate on Insulator Substrates / Wafers (LNOI)
Our Advantages

CQT's primary goal is "To be a reliable primary microelectronics substrates supplier in today's World". The entire organization, beginning with top management, has worked consistently to meet this goal.

Our reputation for quality is based on a commitment to the newest and most effective design, manufacturing, testing, and management procedures - including, but not limited to, design for manufacturing, statistical process control, lean manufacturing, and continuous improvement methodologies. We have had a fully implemented and effective IATF16949 Quality Management System.

CQT is committed to conduct its all operations in a socially responsible, ethical, and sustainable manner to protect the environment and ensure the safety and health of our employees, customers, and surrounding communities. We are also committed to continuous improvement on all environmental issues. CQT maintains ISO9001/ISO14001 certifications and also implements the EICC standards. and implemented the Electrical Industry Code of Conduct as well.

Our policy to work with mails received from our clients is within 24 hours , 
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